ul. Długa 61-65, 53-633 Wrocław
building M-11, room 137
phone +48 71 320 4948

Office hours

Research fields

• Epitaxial growth of semiconductor structures, most of all Metalorganic Vapour Phase Epitaxy MOVPE and Molecular Beam Epitaxy MBE techniques; optical (spectroscopic) and structural (using high resolution x-ray diffractometry) characterization of epitaxial heterostructures and optoelectronic devices made of multicomponent semiconductor alloys; semiconductor quantum structures - their technology, optimization of their construction, characterization and application of them in optoelectronic devices.

Recent papers

2016

• Pucicki D., Bielak K., Badura M., Dawidowski W., Ściana B. (2016) Influence of GaInNAs/GaAs QWs composition profile on the transitions selection rules, Microelectronic Engineering, Vol. 161, 13-17.
• Pucicki D., Bielak K., Ściana B., Radziewicz D., Latkowska-Baranowska M., Kováč J., Vincze A., Tłaczała M. (2016) Determination of composition of non-homogeneous GaInNAs layers, Journal of Crystal Growth, Vol. 433, 105-113.
• Pucicki D., Bielak K., Dawidowski W., Ściana B., Tłaczała M. (2016) Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs based QWs heterostructures, Optica Applicata, Vol. 46, No. 2, 255-263.
• Dyksik M., Motyka M., Rudno-Rudziński W., Sęk G., Misiewicz J., Pucicki D., Kosiel K., Sankowska I., Kubacka-Traczyk J., Bugajski M. (2016) Optical properties of active regions in terahertz quantum cascade lasers, Journal of Infrared, Millimeter and Terahertz Waves, Vol. 37, Iss. 7, 710-719.

2012

• Ściana B., Radziewicz D., Pucicki D., Zborowska-Lindert I., Serafińczuk J., Tłaczała M., Latkowska M., Kováč J., Srnanek R. (2012) MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications, Crystal Research and Technology, Vol. 47, No. 3, 313-320.

2009

• Bisping D., Pucicki D., Fischer M., Koeth J., Zimmermann Ch., Weinmann P., Höfling S., Kamp M., Forchel A., (2009) GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, No 3, 968-972.

2008

• Bisping D., Pucicki D., Höfling S., Habermann S., Ewert D., Fischer M., Koeth J., Forchel A. (2008) High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220–1240-nm Wavelength Range, IEEE Photonics Technology Letters, Vol. 20, No. 21, 1766-1768.

Papers in DONA database

Selected publications
1	Artykuł 2025 Jakub M Ziembicki Rafał Bartoszewicz Miłosz T Grodzicki Paweł Scharoch Robert Kudrawiec Wojciech Olszewski, Damian Pucicki Detlef Hommel, Maciej P Polak, Electronic band structure of GaN diluted and overdiluted with group-V elements. Physical Review Applied. 2025, vol. 23, nr 2, art. 024005, s. 1-11. ISSN: 2331-7019; 2331-7019 Zasoby:DOISFX
2	Artykuł 2025 Anna Wąsiak-Maciejak, Łukasz Przypis Wiktor Żuraw Kinga Rycek, Patrycja Janicka, Mateusz Ścigaj, Konrad Dyk, Huagui Lai, Adrianna M Piejko Damian Pucicki Fan Fu, Vasyl Kinzhybalo, Konrad Wojciechowski, Compositional and interfacial engineering for improved light stability of flexible wide-bandgap perovskite solar cells. Journal of Materials Chemistry A. 2025, vol. 13, nr 10, s. 7335-7346. ISSN: 2050-7488; 2050-7496 Zasoby:DOISFX
3	Artykuł 2024 Miłosz T Grodzicki Maciej O Liedke, Karolina Moszak, Wojciech Olszewski, Łukasz Pawlaczyk Dominika Majchrzak, Rafał Idczak, Damian Pucicki Jarosław Serafińczuk Maik Butterling, Eric Hirschmann, Andreas Wagner, Robert Kudrawiec Detlef Hommel, Defect characterizations of N-rich GaNAs ternary alloys. Vacuum. 2024, vol. 229, art. 113554, s. 1-10. ISSN: 0042-207X Zasoby:DOIURLSFX
4	Artykuł 2024 Wojciech Olszewski, Dominika Majchrzak, Miłosz T Grodzicki Jarosław Serafińczuk Sandeep Gorantla, Damian Pucicki Paweł Piotr Michałowski, Robert Kudrawiec Detlef Hommel, Monocrystalline GaN diluted with up to 7% arsenic grown by MOVPE. Crystal Growth & Design. 2024, vol. 24, nr 10, s. 4057-4964. ISSN: 1528-7483; 1528-7505 Zasoby:DOIURLSFX
5	Artykuł 2024 Łukasz Gelczuk Jan K Kopaczek Damian Pucicki Robert D Richards, Robert Kudrawiec Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature. Materials Science in Semiconductor Processing. 2024, vol. 169, art. 107888, s. 1-10. ISSN: 1369-8001; 1873-4081 Zasoby:DOIURLSFX
6	Artykuł 2023 Ewelina Gacka Piotr M Kunicki Paulina Łysik, Krzysztof R Gajewski Paulina Ciechanowicz, Damian Pucicki Dominika Majchrzak, Teodor Gotszalk Tomasz Piasecki Tito Busani, Ivo Rangelow, Detlef Hommel, Novel type of whisker-tip cantilever based on GaN microrods for atomic force microscopy. Ultramicroscopy. 2023, vol. 248, art. 113713, s. 1-8. ISSN: 0304-3991; 1879-2723 Zasoby:DOIURLSFX
7	Artykuł 2022 Karolina Moszak, Wojciech Olszewski, Damian Pucicki Jarosław Serafińczuk Kamila Startek, Detlef Hommel, AlGaN composition correction under variable ammonia and pressure conditions in MOVPE reactor. Acta Physica Polonica A. 2022, vol. 141, nr 2, s. 105-109. ISSN: 1898-794X; 0587-4246 Zasoby:DOISFX
8	Artykuł 2022 Jarosław Serafińczuk Łukasz Pawlaczyk Karolina Moszak, Damian Pucicki Robert Kudrawiec Detlef Hommel, X-ray diffraction studies of residual strain in AlN/sapphire templates. Measurement (London). 2022, vol. 200, art. 111611, s. 1-7. ISSN: 0263-2241; 1873-412X Zasoby:DOIURLSFX
9	Referat konferencyjny 2022 Adrianna M Piejko Magdalena Tamulewicz-Szwajkowska Szymon J Zelewski Jarosław Serafińczuk Damian Pucicki Robert Kudrawiec Contrast of surface potential in doped monolayers of van der Waals crystals. W: 10th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Tatranská Lomnica, High Tatras, Slovakia, June 20-24, 2022 / [eds. M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2022]. s. 43-46. ISBN: 978-80-554-1806-3
10	Artykuł 2022 Dominika Majchrzak, Sandeep Gorantla, Ewelina A Zdanowicz Agnieszka T Pieniążek Jarosław Serafińczuk Karolina Moszak, Damian Pucicki Miłosz T Grodzicki Bogdan J Kowalski, Robert Kudrawiec Detlef Hommel, Detailed surface studies on the reduction of Al incorporation into AlGaN grown by molecular beam epitaxy in the Ga-droplet regime. Vacuum. 2022, vol. 202, art. 111168, s. 1-7. ISSN: 0042-207X Zasoby:DOIURLSFX

All employee publications