E-mail: wojciech.dawidowski@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Microelectronics and Nanotechnology

ul. Długa 61-65, 53-633 Wrocław
building M-11, room 120
phone +48 71 320 4940

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Recent papers

2018

• López-Escalante M. C., Ściana B., Dawidowski W., Bielak K., Gabás M., Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques. Applied Surface Science. 2018, vol. 433, s. 1-9.
• Kosa A., Stuchlíková Ľ., Harmatha L., Kováč J., Ściana B., Dawidowski W., Tłaczała M., DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions. Materials Science in Semiconductor Processing. 2018, vol. 74, s. 313-318.

2017

• Szyszka A., Dawidowski W., Stafiniak A. P., Prażmowska-Czajka J., Ściana B., Tłaczała M., Cross-sectional scanning capacitance microscopy characterization of GaAs based solar cell structures. Crystal Research and Technology. 2017, vol. 52, nr 6, art. 1700019, s. 1-5.

2016

• Dawidowski W., Ściana B., Zborowska-Lindert I., Mikolášek M., Bielak K., Badura M., Pucicki D., Radziewicz D., Kováč J., Tłaczała M., The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics. Solid-State Electronics. 2016, vol. 120, s. 13-18.
• Kósa A., Stuchlíková Ľ., Harmatha L., Mikolášek M., Kováč J., Ściana B., Dawidowski W., Radziewicz D., Tłaczała M., Defect distribution in InGaAsN/GaAs multilayer solar cells. Solar Energy. 2016, vol. 132, s. 587-590.
• Ściana B., Badura M., Dawidowski W., Bielak K., Radziewicz D., Pucicki D., Szyszka A., Żelazna K., Tłaczała M., LP-MOVPE growth of high Si-doped InGaAs contact layer for quantum cascade laser applications. Opto-Electronics Review. 2016, vol. 24, nr 2, s. 95-102.
• Pucicki D., Bielak K., Badura M., Dawidowski W., Ściana B., Influence of GaInNAs/GaAs QWs composition profile on the transitions selection rules. Microelectronic Engineering. 2016, vol. 161, s. 13-17.

Papers in DONA database

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Selected publications
1	Article 2024 Piotr Mazur, Paweł Chodasewicz, Effect of sputtering power and oxygen partial pressure on structural and opto-electronic properties of Al-doped ZnO transparent conducting oxides. Applied Surface Science. 2024, vol. 670, art. 160601, s. 1-11. ISSN: 0169-4332; 1873-5584 Resources:DOISFX
2	Article 2024 Guoxiu Zhang, Lars Rebohle, Fabian Ganss, E Guziewicz, Jung-Hyuk Koh, Manfred Helm, Shengqiang Zhou, Yufei Liu, Slawomir Prucnal, P-type ZnO films made by atomic layer deposition and ion implantation. Nanomaterials. 2024, vol. 14, nr 13, art. 1069, s. 1-13. ISSN: 2079-4991 Resources:DOISFX
3	Proceeding paper 2024 Zbigniew Starowicz, Jakub Ostapko, Janusz Woźny, Bartłomiej S Witkowski, Rafał Pietruszka, Marek Godlewski, Jaroslav Bruncko, Miroslav Michalka, Andrej Vincze, Investigation of electrical properties of ZnO based layers using EC-V profiling. W: 12th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, June 24-27, 2024 / eds. M. Feiler [i in.]. [B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2024]. s. 53-56. ISBN: 978-80-554-2109-4 Resources:URL
4	Article 2023 Juanmei Duan, Maciej O Liedke, Rang Li, Maik Butterling, Eric Hirschmann, Andreas Wagner, Mao Wang, Lawrence Boyu Young, Yen-Hsun Glen Lin, Minghwei Hong, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal, Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics. Journal of Applied Physics. 2023, vol. 134, nr 9, art. 095102, s. 1-14. ISSN: 0021-8979; 1089-7550 Resources:DOISFX
5	Proceeding paper 2023 Jaroslav Jr Kovăč, Polarization and depth dependent Raman spectroscopy investigation of dilute nitride InGaAsN epilayers. W: 11th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, June 12-15, 2023 / [eds. D. Jandura, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2023]. s. 16-19. ISBN: 978-80-554-1977-0
6	Proceeding paper 2023 Mikołaj Janczak, Tomasz Czyszanowski, Monika Mikulicz, Michał D Rygała, Tristan Smołka, Influence of gold coating on optical properties of heteroepitaxial InP/InGaAs distributed Bragg reflectors. W: 11th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, June 12-15, 2023 / [eds. D. Jandura, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2023]. s. 20-23. ISBN: 978-80-554-1977-0
7	Proceeding paper 2023 Ľubica Stuchlíková, Arpad Kosa, Matej Matuš, Peter Benko, Martin Weis, Insight into the quantum well investigation by transient spectroscopy technique. W: 11th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, June 12-15, 2023 / [eds. D. Jandura, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2023]. s. 55-58. ISBN: 978-80-554-1977-0
8	Proceeding paper 2023 Kwantowe lasery kaskadowe: technologia MOVPE i konstrukcje. W: XIV Konferencja Naukowa Technologia Elektronowa ELTE 2023, Ryn, 18-21 kwietnia 2023 : materiały konferencyjne. [B.m.] : Instytut Mikroelektroniki i Optoelektroniki Politechniki Warszawskiej, [2023]. s. 106-107. ISBN: 978-83-64102-05-9 Resources:URL
9	Proceeding paper 2023 Arpad Kosa, Miroslav Mikolášek, Matej Matuš, Martin Florovič, Ľubica Stuchlíková, Jaroslav Kováč, Wpływ wygrzewania termicznego na parametry ogniwa słonecznego GaAsN: defekty a mechanizm przepływu prądu. W: XIV Konferencja Naukowa Technologia Elektronowa ELTE 2023, Ryn, 18-21 kwietnia 2023 : materiały konferencyjne. [B.m.] : Instytut Mikroelektroniki i Optoelektroniki Politechniki Warszawskiej, [2023]. s. 266-267. ISBN: 978-83-64102-05-9 Resources:URL
10	Proceeding paper 2022 Peter Benko, Arpad Kosa, Matej Matuš, Ľubica Stuchlíková, Influence of annealing temperature on emission and capture processes in GaAsN/GaAs heterostructures. W: The 14th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2022 : conference proceedings, Smolenice Castle, Slovakia, 23-26 October, 2022 / eds. Juraj Marek, Daniel Donoval, Erik Vavrinsky. [Danvers, MA] : IEEE, cop. 2022. s. 17-20. ISBN: 978-1-6654-4616-7; 978-1-7281-9776-0 Resources:DOI

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