Email: damian.pucicki@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Nanometrology

ul. Długa 61-65, 53-633 Wrocław
building M-11, room 137
phone +48 71 320 4948

Office hours

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Research fields

• Epitaxial growth of semiconductor structures, most of all Metalorganic Vapour Phase Epitaxy MOVPE and Molecular Beam Epitaxy MBE techniques; optical (spectroscopic) and structural (using high resolution x-ray diffractometry) characterization of epitaxial heterostructures and optoelectronic devices made of multicomponent semiconductor alloys; semiconductor quantum structures - their technology, optimization of their construction, characterization and application of them in optoelectronic devices.

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Recent papers

2016

• Pucicki D., Bielak K., Badura M., Dawidowski W., Ściana B. (2016) Influence of GaInNAs/GaAs QWs composition profile on the transitions selection rules, Microelectronic Engineering, Vol. 161, 13-17.
• Pucicki D., Bielak K., Ściana B., Radziewicz D., Latkowska-Baranowska M., Kováč J., Vincze A., Tłaczała M. (2016) Determination of composition of non-homogeneous GaInNAs layers, Journal of Crystal Growth, Vol. 433, 105-113.
• Pucicki D., Bielak K., Dawidowski W., Ściana B., Tłaczała M. (2016) Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs based QWs heterostructures, Optica Applicata, Vol. 46, No. 2, 255-263.
• Dyksik M., Motyka M., Rudno-Rudziński W., Sęk G., Misiewicz J., Pucicki D., Kosiel K., Sankowska I., Kubacka-Traczyk J., Bugajski M. (2016) Optical properties of active regions in terahertz quantum cascade lasers, Journal of Infrared, Millimeter and Terahertz Waves, Vol. 37, Iss. 7, 710-719.

2012

• Ściana B., Radziewicz D., Pucicki D., Zborowska-Lindert I., Serafińczuk J., Tłaczała M., Latkowska M., Kováč J., Srnanek R. (2012) MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications, Crystal Research and Technology, Vol. 47, No. 3, 313-320.

2009

• Bisping D., Pucicki D., Fischer M., Koeth J., Zimmermann Ch., Weinmann P., Höfling S., Kamp M., Forchel A., (2009) GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, No 3, 968-972.

2008

• Bisping D., Pucicki D., Höfling S., Habermann S., Ewert D., Fischer M., Koeth J., Forchel A. (2008) High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220–1240-nm Wavelength Range, IEEE Photonics Technology Letters, Vol. 20, No. 21, 1766-1768.

Papers in DONA database

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1	Article 2022 Jarosław Serafińczuk, Łukasz Pawlaczyk, Karolina Moszak, Damian Pucicki, Robert Kudrawiec, Detlef Hommel, X-ray diffraction studies of residual strain in AlN/sapphire templates. Measurement (London). 2022, vol. 200, art. 111611, s. 1-7. ISSN: 0263-2241; 1873-412X Resources:DOIURLSFX
2	Proceeding paper 2022 Adrianna Piejko, Magdalena Tamulewicz-Szwajkowska, Szymon Zelewski, Jarosław Serafińczuk, Damian Pucicki, Robert Kudrawiec, Contrast of surface potential in doped monolayers of van der Waals crystals. W: 10th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Tatranská Lomnica, High Tatras, Slovakia, June 20-24, 2022 / [eds. M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2022]. s. 43-46. ISBN: 978-80-554-1806-3
3	Article 2022 Dominika Majchrzak, Sandeep Gorantla, Ewelina A Zdanowicz, Agnieszka T Pieniążek, Jarosław Serafińczuk, Karolina Moszak, Damian Pucicki, Miłosz T Grodzicki, Bogdan J Kowalski, Robert Kudrawiec, Detlef Hommel, Detailed surface studies on the reduction of Al incorporation into AlGaN grown by molecular beam epitaxy in the Ga-droplet regime. Vacuum. 2022, vol. 202, art. 111168, s. 1-7. ISSN: 0042-207X Resources:DOIURLSFX
4	Article 2021 Dominika Majchrzak, Miłosz T Grodzicki, Karolina Moszak, Ewelina A Zdanowicz, Jarosław Serafińczuk, Damian Pucicki, Robert Kudrawiec, Detlef Hommel, Influence of pulsed Al deposition on quality of Al-rich Al(Ga)N structures grown by molecular beam epitaxy. Surfaces and Interfaces. 2021, vol. 27, art. 101560, s. 1-7. ISSN: 2468-0230 Resources:DOIURLSFX
5	Article 2021 Karolina Moszak, Damian Pucicki, Miłosz T Grodzicki, Wojciech Olszewski, Dominika Majchrzak, Jarosław Serafińczuk, Sandeep Gorantla, Detlef Hommel, Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN. Materials Science in Semiconductor Processing. 2021, vol. 136, art. 106125, s. 1-7. ISSN: 1369-8001; 1873-4081 Resources:DOIURLSFX
6	Article 2021 Łukasz Pawlaczyk, Damian Pucicki, Jarosław Serafińczuk, Fast and efficient approach for multi-component quantum wells analysis based on FFT. Measurement (London). 2021, vol. 186, art. 110118, s. 1-10. ISSN: 0263-2241; 1873-412X Resources:DOIURLSFX
7	Article 2021 Alexandra Filatova-Zalewska, Zenon Litwicki, Karolina Moszak, Wojciech Olszewski, K Opołczyńska, Damian Pucicki, Jarosław Serafińczuk, Detlef Hommel, Andrzej Jeżowski, Anisotropic thermal conductivity of AlGaN/GaN superlattices. Nanotechnology. 2021, vol. 32, nr 7, art. 075707, s. 1-8. ISSN: 0957-4484; 1361-6528 Resources:DOISFX
8	Article 2020 Mercedes Gabás, Efrain Ochoa-Martínez, Damian Pucicki, Iván Lombardero, Laura Barrutia, David Fuertes-Marrón, Mario Ochoa, Iván García, Soon-Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Kian Hua Tan, Andrew D Johnson, Carlos Algora, Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers. Semiconductor Science and Technology. 2020, vol. 35, nr 11, art. 115022, s. 1-14. ISSN: 0268-1242; 1361-6641 Resources:DOIURLSFX
9	Article 2020 Jarosław Serafińczuk, Karolina Moszak, Łukasz Pawlaczyk, Wojciech Olszewski, Damian Pucicki, Robert Kudrawiec, Detlef Hommel, Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample. Journal of Alloys and Compounds. 2020, vol. 825, art. 153838, s. 1-6. ISSN: 0925-8388; 1873-4669 Resources:DOISFX
10	Article 2019 Karolina Moszak, Damian Pucicki, Wojciech Olszewski, D Majchrzak, Jarosław Serafińczuk, Detlef Hommel, Modulated ammonia flow - low temperature AlN buffer LP-MOVPE growth for high quality AlGaN layers. Acta Physica Polonica A. 2019, vol. 136, nr 4, s. 589-592. ISSN: 0587-4246; 1898-794X Resources:DOISFX