E-mail: damian.pucicki@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Nanometrology

ul. Długa 61-65, 53-633 Wrocław
building M-11, room 137
phone +48 71 320 4948

Office hours

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Research fields

• Epitaxial growth of semiconductor structures, most of all Metalorganic Vapour Phase Epitaxy MOVPE and Molecular Beam Epitaxy MBE techniques; optical (spectroscopic) and structural (using high resolution x-ray diffractometry) characterization of epitaxial heterostructures and optoelectronic devices made of multicomponent semiconductor alloys; semiconductor quantum structures - their technology, optimization of their construction, characterization and application of them in optoelectronic devices.

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Recent papers

2016

• Pucicki D., Bielak K., Badura M., Dawidowski W., Ściana B. (2016) Influence of GaInNAs/GaAs QWs composition profile on the transitions selection rules, Microelectronic Engineering, Vol. 161, 13-17.
• Pucicki D., Bielak K., Ściana B., Radziewicz D., Latkowska-Baranowska M., Kováč J., Vincze A., Tłaczała M. (2016) Determination of composition of non-homogeneous GaInNAs layers, Journal of Crystal Growth, Vol. 433, 105-113.
• Pucicki D., Bielak K., Dawidowski W., Ściana B., Tłaczała M. (2016) Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs based QWs heterostructures, Optica Applicata, Vol. 46, No. 2, 255-263.
• Dyksik M., Motyka M., Rudno-Rudziński W., Sęk G., Misiewicz J., Pucicki D., Kosiel K., Sankowska I., Kubacka-Traczyk J., Bugajski M. (2016) Optical properties of active regions in terahertz quantum cascade lasers, Journal of Infrared, Millimeter and Terahertz Waves, Vol. 37, Iss. 7, 710-719.

2012

• Ściana B., Radziewicz D., Pucicki D., Zborowska-Lindert I., Serafińczuk J., Tłaczała M., Latkowska M., Kováč J., Srnanek R. (2012) MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications, Crystal Research and Technology, Vol. 47, No. 3, 313-320.

2009

• Bisping D., Pucicki D., Fischer M., Koeth J., Zimmermann Ch., Weinmann P., Höfling S., Kamp M., Forchel A., (2009) GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, No 3, 968-972.

2008

• Bisping D., Pucicki D., Höfling S., Habermann S., Ewert D., Fischer M., Koeth J., Forchel A. (2008) High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220–1240-nm Wavelength Range, IEEE Photonics Technology Letters, Vol. 20, No. 21, 1766-1768.

Papers in DONA database

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Selected publications
1	Article 2025 Anna Wąsiak-Maciejak, Łukasz Przypis, Wiktor Żuraw, Kinga Rycek, Patrycja Janicka, Mateusz Ścigaj, Konrad Dyk, Huagui Lai, Adrianna Piejko, Fan Fu, Vasyl Kinzhybalo, Konrad Wojciechowski, Compositional and interfacial engineering for improved light stability of flexible wide-bandgap perovskite solar cells. Journal of Materials Chemistry A. 2025, vol. 13, nr 10, s. 7335-7346. ISSN: 2050-7488; 2050-7496 Resources:DOISFX
2	Article 2024 Miłosz T Grodzicki, Maciej O Liedke, Karolina Moszak, Wojciech Olszewski, Dominika Majchrzak, Rafał Idczak, Maik Butterling, Eric Hirschmann, Andreas Wagner, Detlef Hommel, Defect characterizations of N-rich GaNAs ternary alloys. Vacuum. 2024, vol. 229, art. 113554, s. 1-10. ISSN: 0042-207X Resources:DOIURLSFX
3	Article 2024 Wojciech Olszewski, Dominika Majchrzak, Miłosz T Grodzicki, Sandeep Gorantla, Paweł Piotr Michałowski, Detlef Hommel, Monocrystalline GaN diluted with up to 7% arsenic grown by MOVPE. Crystal Growth & Design. 2024, vol. 24, nr 10, s. 4057-4964. ISSN: 1528-7483; 1528-7505 Resources:DOIURLSFX
4	Article 2024 Robert D Richards, Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature. Materials Science in Semiconductor Processing. 2024, vol. 169, art. 107888, s. 1-10. ISSN: 1369-8001; 1873-4081 Resources:DOIURLSFX
5	Article 2023 Paulina Łysik, Paulina Ciechanowicz, Dominika Majchrzak, Tito Busani, Ivo Rangelow, Detlef Hommel, Novel type of whisker-tip cantilever based on GaN microrods for atomic force microscopy. Ultramicroscopy. 2023, vol. 248, art. 113713, s. 1-8. ISSN: 0304-3991; 1879-2723 Resources:DOIURLSFX
6	Article 2022 Karolina Moszak, Wojciech Olszewski, Kamila Startek, Detlef Hommel, AlGaN composition correction under variable ammonia and pressure conditions in MOVPE reactor. Acta Physica Polonica A. 2022, vol. 141, nr 2, s. 105-109. ISSN: 1898-794X; 0587-4246 Resources:DOISFX
7	Article 2022 Karolina Moszak, Detlef Hommel, X-ray diffraction studies of residual strain in AlN/sapphire templates. Measurement (London). 2022, vol. 200, art. 111611, s. 1-7. ISSN: 0263-2241; 1873-412X Resources:DOIURLSFX
8	Proceeding paper 2022 Adrianna Piejko, Magdalena Tamulewicz-Szwajkowska, Contrast of surface potential in doped monolayers of van der Waals crystals. W: 10th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Tatranská Lomnica, High Tatras, Slovakia, June 20-24, 2022 / [eds. M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2022]. s. 43-46. ISBN: 978-80-554-1806-3
9	Article 2022 Dominika Majchrzak, Sandeep Gorantla, Ewelina A Zdanowicz, Agnieszka T Pieniążek, Karolina Moszak, Miłosz T Grodzicki, Bogdan J Kowalski, Detlef Hommel, Detailed surface studies on the reduction of Al incorporation into AlGaN grown by molecular beam epitaxy in the Ga-droplet regime. Vacuum. 2022, vol. 202, art. 111168, s. 1-7. ISSN: 0042-207X Resources:DOIURLSFX
10	Article 2021 Dominika Majchrzak, Miłosz T Grodzicki, Karolina Moszak, Ewelina A Zdanowicz, Detlef Hommel, Influence of pulsed Al deposition on quality of Al-rich Al(Ga)N structures grown by molecular beam epitaxy. Surfaces and Interfaces. 2021, vol. 27, art. 101560, s. 1-7. ISSN: 2468-0230 Resources:DOIURLSFX

All publications