E-mail: bogdan.paszkiewicz@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Microsystems

ul. Długa 61-65, 53-633 Wrocław
building M-11, room 136
phone +48 71 320 4947

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Selected publications
1	Article 2025 Mateusz Glinkowski, Bogdan Paszkiewicz, Regina Paszkiewicz, Buffer leakage current in lateral AlGaN/GaN HEMT. Przegląd Elektrotechniczny. 2025, R. 101, nr 2, s. 161-165. ISSN: 0033-2097; 2449-9544 Resources:DOIURL
2	Article 2024 Bartłomiej Paszkiewicz, Bogdan Paszkiewicz, Andrzej Dziedzic, Study of acoustic emission from the gate of gallium nitride high electron mobility transistors. Electronics. 2024, vol. 13, nr 10, art. 1840, s. 1-12. ISSN: 2079-9292 Resources:DOIURLSFX
3	Article 2023 Bartłomiej Paszkiewicz, Bogdan Paszkiewicz, Andrzej Dziedzic, Influence of external plane stress on electric parameters of AlGaN/GaN HEMT heterostructures. Physica Status Solidi. A, Applications and Materials Science. 2023, vol. 220, nr 18, art. 2100078, s. 1-11. ISSN: 1862-6319; 1862-6300 Resources:DOISFX
4	Article 2022 Bartłomiej Paszkiewicz, Bogdan Paszkiewicz, Andrzej Dziedzic, Fabrication process stochastic model for yield estimation in microwave semiconductor devices production. Journal of Engineering. 2022, vol. 2022, art. 5561059, s. 1-7. ISSN: 2314-4904; 2314-4912 Resources:DOISFX
5	Article 2021 Mateusz Wośko, Bogdan Paszkiewicz, Regina Paszkiewicz, AlGaN/GaN heterostructures electrical performance by altering GaN/sapphire buffers growth pressure and low-temperature GaN interlayers application. Crystal Research and Technology. 2021, vol. 56, nr 12, art. 2100090 s. 1-5. ISSN: 1521-4079; 0232-1300 Resources:DOIURLSFX
6	Article 2021 Mateusz Glinkowski, Bogdan Paszkiewicz, Regina Paszkiewicz, Influence of high electric field on operation of AlGaN/AlN/GaN high electron mobility transistor. Acta Physica Polonica A. 2021, vol. 140, nr 2, s. 192-196. ISSN: 0587-4246; 1898-794X Resources:DOIURLSFX
7	Proceeding paper 2020 Mateusz Glinkowski, Bogdan Paszkiewicz, Regina Paszkiewicz, Imperfections in AlGaN/GaN HEMT heterostructures. W: 8th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Nový Smokovec, High Tatras, Slovakia, September 14th-17th, 2020 / [eds. J. Kováč, jr., F. Chymo, M. Feiler, D. Jandura. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2020]. s. 86-89. ISBN: 978-80-554-1735-6
8	Article 2020 Mateusz Glinkowski, Bogdan Paszkiewicz, Mateusz Wośko, Regina Paszkiewicz, The origin and influence of compensatory current in AlGaN/GaN type high electron mobility transistor heterostructures with two conducting channels on the Hall measurements. Physica Status Solidi. A, Applications and Materials Science. 2020, vol. 217, nr 9, art. 1900661, s. 1-6. ISSN: 1862-6319; 1862-6300 Resources:DOISFX
9	Article 2020 Mateusz Wośko, Bogdan Paszkiewicz, Andrzej Stafiniak, Joanna Prażmowska-Czajka, Andrej Vincze, Michał Stępniak, Bartosz Kaczmarczyk, Regina Paszkiewicz, Metalorganic vapour-phase epitaxy of AlGaN/GaN heterostructures on chlorine plasma etched GaN templates without buried conductive layer. Materials Science in Semiconductor Processing. 2020, vol. 107, art. 104816, s. 1-6. ISSN: 1369-8001 Resources:DOIURLSFX
10	Proceeding paper 2019 Regina Paszkiewicz, Bogdan Paszkiewicz, Mateusz Wośko, Joanna Prażmowska-Czajka, Andrzej Stafiniak, Wojciech Macherzyński, Adam Szyszka, Sławomir Owczarzak, Bartłomiej Paszkiewicz, Grzegorz Ilgiewicz, Piotr Pokryszka, Mateusz Glinkowski, Agnieszka Zawadzka, Projekt technologii tranzystora AlGaN/GaN VHEMT. W: XVIII Krajowa Konferencja Elektroniki : Darłówko Wschodnie, 02-06.06.2019 / Uniwersytet Morski w Gdyni. [B.m. : b.w., 2019]. s. 1-5.

All publications