E-mail: mateusz.wosko@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Microelectronics and Nanotechnology

ul. Długa 61-65, 53-633 Wrocław
building M-4, room 114
phone +48 71 320 4990

Office hours

• poniedziałek 9.00-11.00 (building M-4, room 114)
• wtorek 9.00-11.00 (building C-2, room 306)

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Research fields

• Epitaxy; AIII-N materials (nitrides) technology.

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Recent papers

2016

• Wośko M., Paszkiewicz B., Szymański T., Paszkiewicz R., Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates. Superlattices and Microstructures. 2016, vol. 100, s. 619-626.
• Szymański T., Wośko M., Paszkiewicz B., Serafińczuk J., Drzik M., Paszkiewicz R., Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures. Crystal Research and Technology. 2016, vol. 51, nr 3, s. 225-230.
• Szymański T., Wośko M., Paszkiewicz B., Paszkiewicz B., Paszkiewicz R., Sankowska I., Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces and Films. 2016, vol. 35, nr 5, art. 051504, s. 1-8.

2015

• Wośko M., Paszkiewicz B., Szymański T., Paszkiewicz R., Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates. Journal of Crystal Growth. 2015, vol. 414, s. 248-253.
• Wośko M., Paszkiewicz B., Vincze A., Szymański T., Paszkiewicz R., GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111). Physica Status Solidi. B, Basic Solid State Physics. 2015, vol. 252, nr 5, s. 1195-1200.

Papers in DONA database

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Selected publications
1	Article 2023 Michał Stępniak, The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask. Materials Science in Semiconductor Processing. 2023, vol. 168, art. 107857, s. 1-5. ISSN: 1369-8001; 1873-4081 Resources:DOISFX
2	Article 2023 Michał Stępniak, Sylwia Owczarek, Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks. Applied Surface Science. 2023, vol. 640, art. 158325, s. 1-8. ISSN: 0169-4332; 1873-5584 Resources:DOIURLSFX
3	Article 2023 Michał Stępniak, Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique. Materials Science in Semiconductor Processing. 2023, vol. 160, art. 107394, s. 1-6. ISSN: 1369-8001; 1873-4081 Resources:DOISFX
4	Proceeding paper 2022 Michał Stępniak, Adam Kamiński, Parasitic masking during GAN SA-MOVPE under increased pressure conditions. W: 10th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Tatranská Lomnica, High Tatras, Slovakia, June 20-24, 2022 / [eds. M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2022]. s. 55-58. ISBN: 978-80-554-1806-3
5	Article 2022 Scanning probe microscopy nanoscale electrical characterization of AlGaN/ GaN grown on structured GaN templates. Solid-State Electronics. 2022, vol. 193, art. 108288, s. 1-6. ISSN: 0038-1101; 1879-2405 Resources:DOIURLSFX
6	Article 2021 AlGaN/GaN heterostructures electrical performance by altering GaN/sapphire buffers growth pressure and low-temperature GaN interlayers application. Crystal Research and Technology. 2021, vol. 56, nr 12, art. 2100090 s. 1-5. ISSN: 1521-4079; 0232-1300 Resources:DOIURLSFX
7	Proceeding paper 2021 Michał Stępniak, Modelling of GaN selective area metalorganic vapour phase epitaxy. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 155-158. ISBN: 978-80-554-1806-3
8	Proceeding paper 2021 Atomic layer etching of gallium nitride. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 83-86. ISBN: 978-80-554-1806-3
9	Article 2021 High performance optical shutter design with scalable aperture. Bulletin of the Polish Academy of Sciences. Technical Sciences. 2021, vol. 69, nr 5, art. e138236, s. 1-6. ISSN: 0239-7528; 2300-1917 Resources:DOISFX
10	Article 2021 Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures. Applied Surface Science. 2021, vol. 538, art. 148189, s. 1-12. ISSN: 0169-4332; 1873-5584 Resources:DOISFX

All publications