Email: mateusz.wosko@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Microelectronics and Nanotechnology

ul. Długa 61-65, 53-633 Wrocław
building M-4, room 114
phone +48 71 320 4990

Office hours

• poniedziałek 9.00-11.00 (building M-4, room 114)
• wtorek 9.00-11.00 (building C-2, room 306)

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Research fields

• Epitaxy; AIII-N materials (nitrides) technology.

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Recent papers

2016

• Wośko M., Paszkiewicz B., Szymański T., Paszkiewicz R., Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates. Superlattices and Microstructures. 2016, vol. 100, s. 619-626.
• Szymański T., Wośko M., Paszkiewicz B., Serafińczuk J., Drzik M., Paszkiewicz R., Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures. Crystal Research and Technology. 2016, vol. 51, nr 3, s. 225-230.
• Szymański T., Wośko M., Paszkiewicz B., Paszkiewicz B., Paszkiewicz R., Sankowska I., Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces and Films. 2016, vol. 35, nr 5, art. 051504, s. 1-8.

2015

• Wośko M., Paszkiewicz B., Szymański T., Paszkiewicz R., Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates. Journal of Crystal Growth. 2015, vol. 414, s. 248-253.
• Wośko M., Paszkiewicz B., Vincze A., Szymański T., Paszkiewicz R., GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111). Physica Status Solidi. B, Basic Solid State Physics. 2015, vol. 252, nr 5, s. 1195-1200.

Papers in DONA database

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1	Article 2023 Michał Stępniak, Mateusz Wośko, Regina Paszkiewicz, The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask. Materials Science in Semiconductor Processing. 2023, vol. 168, art. 107857, s. 1-5. ISSN: 1369-8001; 1873-4081 Resources:DOISFX
2	Article 2023 Michał Stępniak, Sylwia Owczarek, Adam Szyszka, Mateusz Wośko, Regina Paszkiewicz, Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks. Applied Surface Science. 2023, vol. 640, art. 158325, s. 1-8. ISSN: 0169-4332; 1873-5584 Resources:DOIURLSFX
3	Article 2023 Michał Stępniak, Mateusz Wośko, Andrzej Stafiniak, Joanna Prażmowska-Czajka, Regina Paszkiewicz, Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique. Materials Science in Semiconductor Processing. 2023, vol. 160, art. 107394, s. 1-6. ISSN: 1369-8001; 1873-4081 Resources:DOISFX
4	Proceeding paper 2022 Michał Stępniak, Mateusz Wośko, Joanna Prażmowska-Czajka, Andrzej Stafiniak, Adam Kamiński, Regina Paszkiewicz, Parasitic masking during GAN SA-MOVPE under increased pressure conditions. W: 10th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Tatranská Lomnica, High Tatras, Slovakia, June 20-24, 2022 / [eds. M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2022]. s. 55-58. ISBN: 978-80-554-1806-3
5	Article 2022 Adam Szyszka, Mateusz Wośko, Andrzej Stafiniak, Joanna Prażmowska-Czajka, Regina Paszkiewicz, Scanning probe microscopy nanoscale electrical characterization of AlGaN/ GaN grown on structured GaN templates. Solid-State Electronics. 2022, vol. 193, art. 108288, s. 1-6. ISSN: 0038-1101; 1879-2405 Resources:DOIURLSFX
6	Article 2021 Mateusz Wośko, Bogdan Paszkiewicz, Regina Paszkiewicz, AlGaN/GaN heterostructures electrical performance by altering GaN/sapphire buffers growth pressure and low-temperature GaN interlayers application. Crystal Research and Technology. 2021, vol. 56, nr 12, art. 2100090 s. 1-5. ISSN: 1521-4079; 0232-1300 Resources:DOIURLSFX
7	Proceeding paper 2021 Michał Stępniak, Mateusz Wośko, Regina Paszkiewicz, Modelling of GaN selective area metalorganic vapour phase epitaxy. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 155-158. ISBN: 978-80-554-1806-3
8	Proceeding paper 2021 Andrzej Stafiniak, Adam Szyszka, Joanna Prażmowska-Czajka, Mateusz Wośko, Regina Paszkiewicz, Atomic layer etching of gallium nitride. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 83-86. ISBN: 978-80-554-1806-3
9	Article 2021 Piotr Pokryszka, Mateusz Wośko, Wojciech Kijaszek, Regina Paszkiewicz, High performance optical shutter design with scalable aperture. Bulletin of the Polish Academy of Sciences. Technical Sciences. 2021, vol. 69, nr 5, art. e138236, s. 1-6. ISSN: 0239-7528; 2300-1917 Resources:DOISFX
10	Article 2021 Adam Szyszka, Mateusz Wośko, Regina Paszkiewicz, Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures. Applied Surface Science. 2021, vol. 538, art. 148189, s. 1-12. ISSN: 0169-4332; 1873-5584 Resources:DOISFX