E-mail: adam.szyszka@pwr.edu.pl

Unit: Faculty of Electronics, Photonics and Microsystems (N) » Department of Microelectronics and Nanotechnology

ul. Długa 61-65, 53-633 Wrocław
building M-11, room 146
phone +48 71 320 4957

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Selected publications
1	Article 2023 Michał Stępniak, Sylwia Owczarek, Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks. Applied Surface Science. 2023, vol. 640, art. 158325, s. 1-8. ISSN: 0169-4332; 1873-5584 Resources:DOIURLSFX
2	Article 2022 Sylwia Baluta, Francesca Meloni, Kinga Halicka-Stępień, Antonio Zucca, Maria I Pilo, Differential pulse voltammetry and chronoamperometry as analytical tools for epinephrine detection using a tyrosinase-based electrochemical biosensor. RSC Advances. 2022, vol. 12, nr 39, s. 25342-25353. ISSN: 2046-2069 Resources:DOISFX
3	Article 2022 Scanning probe microscopy nanoscale electrical characterization of AlGaN/ GaN grown on structured GaN templates. Solid-State Electronics. 2022, vol. 193, art. 108288, s. 1-6. ISSN: 0038-1101; 1879-2405 Resources:DOIURLSFX
4	Proceeding paper 2021 Atomic layer etching of gallium nitride. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 83-86. ISBN: 978-80-554-1806-3
5	Article 2021 Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures. Applied Surface Science. 2021, vol. 538, art. 148189, s. 1-12. ISSN: 0169-4332; 1873-5584 Resources:DOISFX
6	Article 2020 Sylwia Baluta, Enzymatic platforms for sensitive neurotransmitter detection. Sensors. 2020, vol. 20, nr 2, art. 423, s. 1-25. ISSN: 1424-8220 Resources:DOIURLSFX
7	Article 2019 Badanie elektrycznych właściwości powierzchni heterostruktur AlGaN/GaN/Si technikami mikroskopii ze skanującą sondą i oświetleniem = Characterization of the electrical properties of AlGaN/GaN heterostructures on a silicon substrate by scanning capacitance and scanning surface potential microscopy. Przegląd Elektrotechniczny. 2019, R. 95, nr 9, s. 157-160. ISSN: 0033-2097; 2449-9544 Resources:DOIURL
8	Proceeding paper 2019 Sławomir Owczarzak, Grzegorz Ilgiewicz, Mateusz Glinkowski, Agnieszka Zawadzka, Projekt technologii tranzystora AlGaN/GaN VHEMT. W: XVIII Krajowa Konferencja Elektroniki : Darłówko Wschodnie, 02-06.06.2019 / Uniwersytet Morski w Gdyni. [B.m. : b.w., 2019]. s. 1-5.
9	Article 2019 Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP‑MOVPE correlated with their structural and optical properties. Journal of Materials Science. Materials in Electronics. 2019, vol. 30, nr 17, s. 16216-16225. ISSN: 0957-4522; 1573-482X Resources:DOISFX
10	Article 2019 Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy. Materials Science in Semiconductor Processing. 2019, vol. 94, s. 57-63. ISSN: 1369-8001 Resources:DOISFX

All publications