Wydział Elektroniki, Fotoniki i Mikrosystemów

dr inż. Joanna Prażmowska-Czajka

Email: joanna.prazmowska@pwr.edu.pl

Jednostka: Wydział Elektroniki, Fotoniki i Mikrosystemów » Katedra Mikroelektroniki i Nanotechnologii

ul. Długa 61-65, Wrocław
bud. M-11, pok. 145
tel. 71 320 4956


Wybrane publikacje
1
Artykuł
2023
Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique. Materials Science in Semiconductor Processing. 2023, vol. 160, art. 107394, s. 1-6. ISSN: 1369-8001; 1873-4081
Zasoby:DOISFXImpact FactorLista FiladelfijskaLista MNiSW
2
Referat konferencyjny
2022
Parasitic masking during GAN SA-MOVPE under increased pressure conditions. W: 10th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Tatranská Lomnica, High Tatras, Slovakia, June 20-24, 2022 / [eds. M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2022]. s. 55-58. ISBN: 978-80-554-1806-3
3
Artykuł
2022
Thermal synthesis of Ga2O3/SnO2 core-shell nanowires and their structural characterization. Materials Science and Engineering. B, Advanced Functional Solid-State Materials. 2022, vol. 282, art. 115743, s. 1-6. ISSN: 0921-5107; 1873-4944
Zasoby:DOIURLSFXImpact FactorLista FiladelfijskaLista MNiSW
4
Artykuł
2022
Scanning probe microscopy nanoscale electrical characterization of AlGaN/ GaN grown on structured GaN templates. Solid-State Electronics. 2022, vol. 193, art. 108288, s. 1-6. ISSN: 0038-1101; 1879-2405
Zasoby:DOIURLSFXImpact FactorLista FiladelfijskaLista MNiSW
5
Artykuł
2021
Study of scandium based ohmic contacts to AlGaN/GaN heterostructures. Advances in Electrical and Electronic Engineering. 2021, vol. 19, nr 4, s. 355-360. ISSN: 1336-1376; 1804-3119
Zasoby:DOIURLSFXLista FiladelfijskaLista MNiSWOpen Access
6
Referat konferencyjny
2021
Flexible meshes for medical application. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 79-82. ISBN: 978-80-554-1806-3
7
Referat konferencyjny
2021
Atomic layer etching of gallium nitride. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 83-86. ISBN: 978-80-554-1806-3
8
Artykuł
2021
Study of the side walls inclination angle after RIE process of piezotronic structures = Badanie kąta nachylenia ścian bocznych struktur piezotronicznych po procesie RIE. Przegląd Elektrotechniczny. 2021, R. 97, nr 5, s. 94-98. ISSN: 0033-2097; 2449-9544
Zasoby:DOILista FiladelfijskaLista MNiSWOpen Access
9
Referat konferencyjny
2020
Applicapibility of scandium for ohmic contacts to AlGaN/GaN heterostructures. W: 8th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Nový Smokovec, High Tatras, Slovakia, September 14th-17th, 2020 / [eds. J. Kováč, jr., F. Chymo, M. Feiler, D. Jandura. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2020]. s. 70-73. ISBN: 978-80-554-1735-6
10
Artykuł
2020
Growth uniformity in selective area epitaxy of AlGaN/GaN heterostructures for the application in semiconductor devices. Electronics. 2020, vol. 9, nr 12, art. 2129, s. 1-15. ISSN: 2079-9292
Zasoby:DOIURLSFXImpact FactorLista FiladelfijskaLista MNiSWOpen Access

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