Wybrane publikacje |
1 | Artykuł 2023
Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique. Materials Science in Semiconductor Processing. 2023, vol. 160, art. 107394, s. 1-6. ISSN: 1369-8001; 1873-4081 | Zasoby:DOISFX | |
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2 | Referat konferencyjny 2022
Parasitic masking during GAN SA-MOVPE under increased pressure conditions. W: 10th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Tatranská Lomnica, High Tatras, Slovakia, June 20-24, 2022 / [eds. M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2022]. s. 55-58. ISBN: 978-80-554-1806-3 |
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3 | Artykuł 2022
Thermal synthesis of Ga2O3/SnO2 core-shell nanowires and their structural characterization. Materials Science and Engineering. B, Advanced Functional Solid-State Materials. 2022, vol. 282, art. 115743, s. 1-6. ISSN: 0921-5107; 1873-4944 | Zasoby:DOIURLSFX | |
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4 | Artykuł 2022
Scanning probe microscopy nanoscale electrical characterization of AlGaN/ GaN grown on structured GaN templates. Solid-State Electronics. 2022, vol. 193, art. 108288, s. 1-6. ISSN: 0038-1101; 1879-2405 | Zasoby:DOIURLSFX | |
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5 | Artykuł 2022
Limitations of optical lithography on non-planar surfaces. Materials Science in Semiconductor Processing. 2022, vol. 143, art. 106548, s. 1-6. ISSN: 1369-8001; 1873-4081 | Zasoby:DOIURLSFX | |
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6 | Artykuł 2021
Study of scandium based ohmic contacts to AlGaN/GaN heterostructures. Advances in Electrical and Electronic Engineering. 2021, vol. 19, nr 4, s. 355-360. ISSN: 1336-1376; 1804-3119 | Zasoby:DOIURLSFX | |
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7 | Artykuł 2021
AlGaN/GaN heterostructures electrical performance by altering GaN/sapphire buffers growth pressure and low-temperature GaN interlayers application. Crystal Research and Technology. 2021, vol. 56, nr 12, art. 2100090 s. 1-5. ISSN: 1521-4079; 0232-1300 | Zasoby:DOIURLSFX | |
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8 | Referat konferencyjny 2021
Experimental aspects of chromium etching process for the lithography mask fabrication. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 179-182. ISBN: 978-80-554-1806-3 |
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9 | Referat konferencyjny 2021
Modelling of GaN selective area metalorganic vapour phase epitaxy. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 155-158. ISBN: 978-80-554-1806-3 |
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10 | Referat konferencyjny 2021
Flexible meshes for medical application. W: 9th International Conference on Advances in Electronic and Photonic Technologies : proceedings of ADEPT, Podbanské, High Tatras, Slovakia, September 20-23, 2021 / [eds. D. Jandura, P. Maniaková, I. Lettrichová, J. Kováč, jr. B.m. : University of Žilina in EDIS-Publishing Centre of UZ, 2021]. s. 79-82. ISBN: 978-80-554-1806-3 |
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